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| CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature (T-3/4) Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics. The diode is case compatible to the BPW16N phototransistor, allowing the user to assemble his own optical interrupters. Features * Suitable for pulse operation * * * * * * Standard T-3/4 flat miniature package Wide angle of half intensity = 55 Peak wavelength p = 950 nm Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 8638 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Forward current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t3s tp 100 s Test condition Symbol VR IF IFSM PV Tj Tstg Tsd RthJA Value 5 100 2 170 100 - 25 to + 100 245 450 Unit V mA A mW C C C K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Breakdown Voltage Junction capacitance Test condition IF = 50 mA, tp 20 ms IR = 100 A VR = 0 V, f = 1 MHz, E = 0 Symbol VF V(BR) Cj 5 50 Min Typ. 1.3 Max 1.6 Unit V V pF Document Number 81001 Rev. 1.4, 08-Mar-05 www.vishay.com 1 CQY36N Vishay Semiconductors Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Radiant Intensity Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Fall Time Virtual Source Diameter IF = 50 mA IF = 50 mA IF = 1.5 A, tp/T = 0.01, tp 10 s IF = 1.5 A, tp/T = 0.01, tp 10 s Test condition IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA Symbol Ie e TKe p tr tf Min 0.7 Typ. 1.5 10 - 0.8 55 950 50 400 450 1.2 Max 7.5 Unit mW/sr mW %/K deg nm nm ns ns mm Typical Characteristics (Tamb = 25 C unless otherwise specified) 250 P - Power Dissipation ( mW ) V I F - Forward Current ( mA ) 10 4 10 3 10 2 10 1 10 0 10 -1 0 20 40 60 80 100 94 7996 200 150 R thJA 100 50 0 0 1 2 3 4 94 8029 Tamb - Ambient Temperature ( C ) V F - Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Forward Current vs. Forward Voltage 125 100 V Frel - Relative Forward Voltage I F - Forward Current ( mA ) 1.2 1.1 I F = 10 mA 1.0 0.9 75 R thJA 50 25 0 0 20 40 60 80 100 0.8 0.7 0 20 40 60 80 100 94 7916 Tamb - Ambient Temperature ( C ) 94 7990 T amb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Figure 4. Relative Forward Voltage vs. Ambient Temperature www.vishay.com 2 Document Number 81001 Rev. 1.4, 08-Mar-05 CQY36N Vishay Semiconductors 100 I e - Radiant Intensity ( mW/sr ) e rel - Relative Radiant Power 1.25 1.0 10 0.75 0.5 1 0.25 I F = 100 mA 0 900 950 - Wavelength ( nm ) 1000 0.1 100 94 7917 101 102 103 I F - Forward Current ( mA ) 104 94 7994 Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Power vs. Wavelength 0 I e rel - Relative Radiant Intensity 10 20 30 100 e - Radiant Power ( mW ) 40 1.0 0.9 0.8 0.7 50 60 70 80 10 1 0.1 1 13718 10 100 1000 94 7919 0.6 0.4 0.2 0 0.2 0.4 0.6 I F - Forward Current ( mA ) Figure 6. Radiant Power vs. Forward Current Figure 9. Relative Radiant Intensity vs. Angular Displacement 1.6 1.2 I e rel ; e rel I F = 20 mA 0.8 0.4 0 -10 0 10 94 7993 50 100 140 T amb - Ambient Temperature ( C ) Figure 7. Rel. Radiant Intensity/Power vs. Ambient Temperature Document Number 81001 Rev. 1.4, 08-Mar-05 www.vishay.com 3 CQY36N Vishay Semiconductors Package Dimensions in mm 96 12189 www.vishay.com 4 Document Number 81001 Rev. 1.4, 08-Mar-05 CQY36N Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81001 Rev. 1.4, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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